bar 64-07 oct-05-1999 1 silicon pin diode array ? high voltage current controlled rf resistor for rf attenuator and switches ? frequency range above 1 mhz ? low resistance and short carrier lifetime ? for frequencies up to 3 ghz vps05178 2 1 3 4 32 eha07008 1 4 type marking pin configuration package bar 64-07 pts 1 = c1 2 = c2 3 = a2 4 = a1 sot-143 maximum ratings symbol value unit parameter diode reverse voltage 200 v v r forward current i f 100 ma total power dissipation , t s 25 c p tot 250 mw junction temperature t j c 150 operating temperature range t op -55 ... 150 c storage temperature t st g -55 ... 150 thermal resistance junction - ambient 1) r thja 450 k/w 1) package mounted on alumina 15mm x 16.7mm x 0.7mm
bar 64-07 oct-05-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (br) 200 - - v forward voltage i f = 50 ma v f - - 1.1 ac characteristics pf c t diode capacitance v r = 20 v, f = 1 mhz 0.35 0.23 - ? r f forward resistance i f = 1 ma, f = 100 mhz i f = 10 ma, f = 100 mhz i f = 100 ma, f = 100 mhz - - - 20 3.8 1.35 12.5 2.1 0.85 s charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma 1.55 - rr - series inductance l s nh - 2 -
bar 64-07 oct-05-1999 3 forward current i f = f ( v f ) t a = parameter v ehd07137 f f ma -2 10 10 -1 10 0 10 1 10 2 0 0.5 1.0 1.5 v t a = -40 ?c 25 85 ?c ?c forward resistance r f = f ( i f ) f = 100mhz ehd07135 f f r ? 10 -2 -1 10 ma 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 diode capacitance c t = f ( v r ) f = parameter v ehd07136 r t c 0 0v pf 0.1 0.2 0.3 0.4 0.5 10 20
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